1 - 2 ? 2000 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 200 v v dgr t j = 25 c to 150 c; r gs = 1 m 200 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c 71a i dm t c = 25 c, pulse width limited by t jm 320 a i ar t c = 25 c 80a e ar t c = 25 c 45 mj e as 1.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 p d t c = 25 c 310 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in) from case for 10 s 300 c m d mounting torque 1.13/10 nm/lb.in. weight 5g n-channel enhancement mode avalanche rated low q g , high dv/dt symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 ua 200 v v gs(th) v ds = v gs , i d = 4 ma 2.0 4.0 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss t j = 25 c25 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = i t 28 m note 1 hiperfet tm power mosfets isoplus247 tm , q-class (electrically isolated back surface) 98617a (7/00) g d g = gate d = drain s = source tab = drain features ? silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation low drain to tab capacitance(<30pf) low r ds (on) hdmos tm process rugged polysilicon gate cell structure unclamped inductive switching (uis) rated fast intrinsic rectifier applications dc-dc converters battery chargers switched-mode and resonant-mode power supplies dc choppers ac motor control advantages easy assembly space savings high power density ixfr 80n20q v dss = 200 v i d25 = 71 a r ds(on) = 28m t rr 200 ns isoplus 247 tm e153432 ixys reserves the right to change limits, test conditions, and dimensions. preliminary data www..net
2 - 2 ? 2000 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = i t note 1 35 45 s c iss 4600 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1100 pf c rss 500 pf t d(on) 26 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i t 50 ns t d(off) r g = 2 (external), 75 ns t f 20 ns q g(on) 180 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = i t 39 nc q gd 100 nc r thjc 0.40 k/w r thck 0.15 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 80 a i sm repetitive; 320 a pulse width limited by t jm v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr 200 ns q rm 1.2 c i rm 10 a i f = i s , -di/dt = 100 a/ s, v r = 100 v note: 1. pulse test, t 300 s, duty cycle d 2 %; i t = 80a ixfr 80n20q isoplus 247 (ixfr) outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 .244 r 4.32 4.83 .170 .190 s 13.21 13.72 .520 .540 t 15.75 16.26 .620 .640 u 1.65 3.03 .065 .080 1 gate, 2 drain (collector) 3 source (emitter) 4 no connection ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 www..net
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